PRODUCTION ENGINEERING MEASURE TYPE 2N1016B SILICON ALLOY TRANSISTOR
Abstract
The improvement of reliability of silicon alloy power transistors, particularly the Type 2N1016B, through the incorporation of various improvements in device fabrication is planned. No changes in the basic device structure are planned. Rather, the planned improvements are aimed at increased device perfection through incorporation of new, more controllable processing techniques, redesign of some components of the encapsulation, and improved control of surface condition and stabili ty. These modifications are expected to improve reliability by leading to more uniform device structures, current flow and heat flow, and to greater long-term chemical stability of the active element. Progress on several phases of the pro cess improvement program leading to completion in terms of revised process specifications is de scribed. Continued development in other process improvement areas is described. Considerable data and preliminary analysis of the step-stress pro gram results are given.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1963
- Accession Number
- AD0410279
Entities
People
- E. G. Fatzer
- J. R. Forys
- R. W. France
- S. Chinowsky
- T. Csakvari
Organizations
- Westinghouse Electric Corporation