RESEARCH ON SILICON SINGLE CRYSTAL THIN FILMS AND DEVICES.
Abstract
The phenomena necessary to produce device quality silicon films and silicon thin film diodes and transistors on an insulating polycrystalline substrate by hydrogen reduction of silicon tetrachloride are investigated. Deposition of device-quality silicon films on substrates coated with a mixture of oxides which are fluid at the deposition temperature is specifically investigated. During this quarter the substrate evaluation by light microscopy and electrical measurements of the silicon films was completed. The NMCS glaze formulation is the best of the five compositions evaluated. Surface structures of silicon films deposited at substrate temperatures from 1050 C to 1250 C are similar based on metallographic examination. Films deposited at 1150 C exhibited the flattest structure and most uniform spreading. X-ray and electron diffraction studies were initiated to further evaluate the silicon films. Thus far, the electron and X-ray diffraction patterns show Laue spots and no rings, indicating preferred orientation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 21, 1963
- Accession Number
- AD0410826
Entities
People
- E. Rasmanis
- Jill A. Madden
- R. Beatty
Organizations
- Sylvania Electric Products