HIGH POWER L-BAND SWITCH SA-819( )/UPX.
Abstract
Efforts were directed towards the evolution of a single pole, double throw RF switch which has been developed by the Solid-State Circuits Division at Microwave Associates. The RF switching element used is a PIN diode. It will be seen that this report stresses the development of a diode with the proper characteristics to function ideally in this application. The design goals have all been realized and the methods used to accomplish this constitute the body of this report. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 30, 1963
- Accession Number
- AD0410881
Entities
People
- James A. Jones
- Louis Kachavos
Organizations
- M/A-COM Technology Solutions