DIFFUSION OF IMPURITIES INTO SILICON THROUGH AN OXIDE LAYER.

Abstract

Radioactive tracer measurements and theoretical calculations have been continued in an attempt to clarify the surface and interface conditions during diffusion of phosphorus into silicon through an oxide layer. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1963
Accession Number
AD0411143

Entities

People

  • J.c.c. Tsai
  • M.o. Thurston
  • R.b. Menon

Organizations

  • Ohio State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Diffusion
  • Elements
  • Impurities
  • Measurement
  • Phosphorus

Readers

  • Agricultural Chemistry/Soil Science
  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Surface Coatings Technology.