THE RESEARCH AND DEVELOPMENT OF HIGH CURRENT AND HIGH VOLTAGE SILICON CONTROLLED RECTIFIERS.
Abstract
Research was continued on the development of high current and high-voltage silicon controlled rec tifiers. Design optimization of voltage, current and speed, and the approach to various problems concerning fabrication of Device C are discussed. Test data obtained on representative samples fabricated are included herein. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1963
- Accession Number
- AD0411388
Entities
Organizations
- General Electric