ANALYSIS OF FAILURE MECHANISMS WITH HIGH-ENERGY RADIATION.
Abstract
The effects of Cobalt 60 gamma radiation on good and failed silicon and germanium diodes, and on silicon PNP transistors, were investigated in some detail for accumulated doses up to 5 x 10 to the 7th power r. For the diodes, much greater changes in reverse current were produced in the failed units than in the good units by the irra diation. The results for the silicon PNP tran sistors were not as definite. Preliminary stud ies of the effects of varying the gas ambient upon the I-V characteristics of germanium diodes were made with the aid of a dry-type high vacuum system especially constructed for use on this contract. Reverse characteristics of good units were much more stable than those of failed units for ambient variations from dry air at 1 atmos phere to vacua of 2 x 10 to the -9th power Torr. A preliminary study was made of failure mecha nisms in Teflon arising from thermal embrittle ment. Cobalt 60 gamma radiation was used to ac celerate the embrittlement process. The degree of crystallinity, believed to correlate with the embrittlement, was measured by x-ray diffraction and by hydrostatic weighing as a function of ra diation dosage. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1963
- Accession Number
- AD0412647
Entities
People
- And C.b. Schoch
- R.l. Anthony
- V.r. Honnold
Organizations
- Hughes Aircraft Company