VHF SILICON POWER TRANSISTOR.
Abstract
A theory for the large-signal high-frequency operation of power transistors is presented, and effects limiting the power output are analyzed. One of these is the voltage drop in the collector body caused by the high current concentration produced by emission crowding. The other is the large current that may flow when the tran sistor should be cut off, resulting from forward bias on the base-emitter junction produced by charging the collector capacitor. Calculations are made showing that the former effect is very serious in the present transistor, and that a lower base sheet resistance is necessary to improve the rf efficiency. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1963
- Accession Number
- AD0412741
Entities
People
- R.m. Scarlett