SEMICONDUCTOR THIN FILMS.
Abstract
(1) To Deposit Films in a Dynamic 10 to the -8th power Vacuum System; (2) To Investigate Annealing of GaAs Films; (3) To Make Hall Measurements at a Series of Temperatures; (4) To Investigate Deposition at Microns per Second; (5) To Improve the Resolution in Electron Microscope Surface Studies and to Investigate a Setup for Etching Thicker Films Down to Thicknesses Suitable for Electron Microscopy; and (6) To Continue Device Studies with Films of Available Quality. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1963
- Accession Number
- AD0412841