THE SURFACE BARRIER EFFECT IN PHOTOVOLTAIC CONVERSION.

Abstract

An investigation of the photovoltaic effect in cells constructed by the evaporation of a metal film on a semiconductor surface is described. For high efficiency, the thickness of the oxide layer between the semiconductor and the metal film must be below a critical thickness. The photovoltaic effect is determined by surface states, rather than by the difference of the work functions of the semiconductor and metal. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1963
Accession Number
AD0413146

Entities

People

  • Georg Rupprecht

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Conversion
  • Efficiency
  • Electronics
  • Evaporation
  • Films
  • Metal Films
  • Photovoltaic Effect
  • Semiconductors
  • Solid State Electronics
  • Thickness
  • Work Functions

Readers

  • Energy Conservation and Renewable Energy Engineering.
  • Nuclear and Radiation Engineering.
  • Plasma Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene