EFFECTS OF PROTON IRRADIATION ON THE PROPERTIES OF SILICON,

Abstract

Diffusion enhancement, revealed by the displace ment of a p-n junction, in silicon crystals proton-irradiated at high temperature has been studied previously. In the present work Lang's method has been used to study the defects created by irradiation. It has been found that the whole thickness of the crystal may be perturbed and that this perturbation disappears if the region 10 microns from the surface (penetration depth of the protons) where the defects were created is etched away. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 25, 1963
Accession Number
AD0413309

Entities

People

  • A. Authier
  • J. C. Pfister
  • P. Lallemand

Organizations

  • École Normale Supérieure

Tags

DTIC Thesaurus Topics

  • Diffusion
  • High Temperature
  • Mathematics
  • P-N Junctions
  • Perturbations
  • Thickness

Readers

  • Fluid Dynamics.
  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology