RESEARCH INVESTIGATION OF p-i-n ELECTRON JUNCTION DETECTORS.
Abstract
Efforts were directed toward comparing the response of silicon, lithium-drifted p-i-n junc tion detectors to beta-ray sources with ex trapolation chamber measurements of the surface absorbed dose rate, thick sources containing Tl204 were utilized in carefully specified geometries. Dose rate measurements were made using sources with areas of 10.0 cm squared and 1.04 cm squared. Detector open-circuit voltage measurements were madehe 1.04-cm squared area source, using a number of thin-window p-i-n junction detectors. Comparison to extrapolation chamber measurements shows a linear correlation between open-circuit voltage and surface absorbed dose rate up to rates as high as 400 rad/hr for the geometries studied. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1963
- Accession Number
- AD0413449
Entities
Organizations
- HRL Laboratories