ACTIVE THIN-FILM TECHNIQUES MICROMIN PROGRAM.
Abstract
The purpose of this investigation is to develop a process for depositing device-quality silicon and/or germanium films on polycrystalline in sulating substrate by vacuum evaporation of silicon and/or germanium and to form thin film diodes and transistors in these films. During this period, npn transistor structures were vacuum deposited through masks by using silicon doped by simultaneous evaporation of either antimony or aluminum. The alphas of such vacuum deposited thin film silicon transistors varied from 0.90 to 0.93, and grounded emitter current gains, betas, varied from 2 to 10 at V sub ce 5V and I sub B 0.1 ma. Diode AND/OR gates were deposited using two silicon layers, a sili con monoxide insulating layer and evaporated nickel contacts. Each 1/2 inch X 1/2 inch alumina substrate had two functioning AND/OR gates with six inputs each. This was the first demonstration of a working all-thin film circuit using silicon devices. Electron microscopy and electron diffraction studies of vacuum deposited rheotaxial silicon films continued, and results during this quarter showed that increasing the substrate temperature to 1000 C increases the average size of aggregates to two microns and crystallites to 1500A. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 20, 1963
- Accession Number
- AD0413998
Entities
People
- Egons Rasmanis
- James Cline
Organizations
- Sylvania Electric Products