GALLIUM PHOSPHIDE DEVICES
Abstract
The synthesis of gallium phosphide has been pursued. Several alternate vapor synthesis methods were explored with negative results from a practical viewpoint. The melt growth of gal lium phosphide was impeded by furnacing difficulties ties which essentially have now been resolved. Epitaxial growth of gallium phosphide was accomplished with good control of growth rates and doping by the sealed ampoule iodine transport method. Photographic evidence of structures in dicate excellent quality. Epitaxial growth of gallium phosphide by an open-flow iodine transport system was accomplished. Results are equally good and this method offers facilities in alternate type, consecutive growth of layers without interruption. Optical transmission of bulk undoped gallium phosphide material has been determined. Transmission in the visible spectrum is very good, and supports the feasibility of light operated 3-terminal devices. Infrared transmission of two samples was determined. Transmission was low between 3 and 16 microns. Diffused diodes were fabricated and tested.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 14, 1963
- Accession Number
- AD0414183
Entities
People
- George N. Webb
- J.s. Roderique
- Jno.e. Budiselic
- Lloyd W. Brown
- Louis E. Stone