SILICON PLANAR EPITAXIAL TRANSISTOR TYPE 2N2193. SILICON GROWN DIFFUSED TRANSISTOR TYPE 2N336
Abstract
Contents: Contact Evaporation and Alloying; Collector Contact to the Header; Interconnections; Reliability Measurement; and Inspection and Quality Control Plan.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1963
- Accession Number
- AD0414574
Entities
People
- S. O. Johnson
Organizations
- General Electric