TUNNEL EMISSION AMPLIFIER - THIN FILM CIRCUIT STUDY.
Abstract
This report discusses research on the tunnelemission amplifier and its relation to thin-film circuits. The two major areas of technical effort were the evaluation of various materials with respect to their use in tunneling devices, and the development of integrated thin-film circuits employing state-of-the-art hot electron devices. Some of the thin-film materials studied were found to have properties which are potentially useful in thin-film microcircuitry. The anodic Ta2O5 exhibited a rectifying characteristic when used in a Ta-Ta2O5-Au structure; based on this effect, thin-film diode logic circuits (AND gates and OR gates) were developed and successfully operated. Details of the circuits' operating characteristics as well as temperature, radiation and life test results are given. Evaporated CdS films were found to have stable negative resistance characteristics when formed into SnO-CdS-Au diode structures; these thin-film negative resistance diodes were used as active devices to make relaxation oscillator circuits. This report also discusses the basic problems associated with the development of the tunnel emission amplifier. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 17, 1963
- Accession Number
- AD0414612
Entities
People
- B. Kazan
- D. P. Foote