PRODUCTION ENGINEERING MEASURE ON 2N1708 SILICON PLANAR EPITAXIAL TRANSISTOR

Abstract

Process improvements were completed in all areas investigated. An improved method of removing photo resist was developed. A study of inorganic reagent materials as sources of semi-conductor surface contamination was completed. Conclusions concerning the concentrations of impurities and the effectiveness of various desorption techniques are included. The use of thin aluminum contacts has inhibited formation of ''purple plague''. Experiments with gold contacts were unsuccessful. The use of gold alloy wire did not materially improve the bond strength. Nailhead bonding with a smaller diameter gold wire to reduce the size of the ball met with only limited success. A program of reliability testing and analysis and studies of rmal resistance measurements form junction to ambient (T sub J-A) were completed.

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Document Details

Document Type
Technical Report
Publication Date
Apr 30, 1963
Accession Number
AD0414913

Entities

People

  • A. Warren
  • L. R. Possemato

Tags

Communities of Interest

  • Advanced Electronics
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Chemistry
  • Chlorides
  • Electronics
  • Engineering
  • Failure Mode And Effect Analysis
  • Gold Alloys
  • High Temperature
  • Life Tests
  • Materials
  • Measurement
  • Production Engineering
  • Quality Control
  • Semiconductor Devices
  • Semiconductors
  • Shelf Life
  • Test And Evaluation
  • Thermal Resistance

Readers

  • Integrated Circuit Design and Technology.
  • Surface Engineering/Surface Coating Technology.
  • Thermal Physics or Thermal Science.