OPTICAL PROPERTIES OF CU-DOPED INSB FILMS,
Abstract
The three-temperature technique for preparing InSb layers has been modified for counter-doping by simultaneously evaporating copper with the principal constituents. Electrical and optical measurements indicate qualitatively that the resultant layers have properties similar to those of p-type polycrystalline bulk InSb. Evaporated p-type InSb films show good transmittance characteristics to 35 microns. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1963
- Accession Number
- AD0415056
Entities
People
- G. G. Kretschmar
- R. F. Potter
Organizations
- Naval Ordnance Laboratory