THE TRAVELLING SOLVENT METHOD OF CRYSTAL GROWTH.

Abstract

The growth of single crystals of GaAs and SiC by a Travelling Solvent Method is discussed. The effect of temperature, temperature gradient, zone thickness, and crystal face relationship on crystal growth by TSM was investigated. Purification of the GaAs crystals and a decrease in dislocation density occurred during crystal growth by TSM. For GaAs crystal growth from Ga, the process was found to be diffusion controlled. P-N junctions were grown in GaAs by TSM. These junctions all showed the square law behavior characteristic of an extremely abrupt junction. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1963
Accession Number
AD0415923

Entities

People

  • A. I. Mlavsky
  • L. B. Griffiths
  • M. A. Wright
  • M. Weinstein

Tags

DTIC Thesaurus Topics

  • Crystal Growth
  • Crystals
  • Diffusion
  • Dislocations
  • Isotherms
  • P-N Junctions
  • Single Crystals
  • Temperature Gradients
  • Thickness
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Applied Combinatorial Optimization and Logic Circuit Design.
  • Materials Science and Engineering.
  • Semiconductor Device Technology