HIGH-TEMPERATURE THERMAL CONDUCTIVITY MEASURE MENTS IN SEMICONDUCTORS.
Abstract
Efforts concerned the measurement of the contact and bulk thermal conductivities of semiconductors at temperatures above room temperature by means of the series comparative method. Measurements of thermal conductivity K of highly-doped p-type InSb were completed. Results on three samples are given. Calculations of the approximate thermal resistivities limited by lattice Umklapp scattering and by impurities are presented. A series comparison method was employed in measur ing thermal conductivity and effects of a magnetic field on transport properties of one sample of TiTeS and on three heavily doped samples of p-type InSb. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 1963
- Accession Number
- AD0415941
Entities
People
- Robert G. Morris
Organizations
- South Dakota School of Mines and Technology