500 DEGREES C SILICON CARBIDE RECTIFIER PROGRAM.
Abstract
The basic objective of this project is the development of methods for the production of 1 ampere silicon carbide rectifiers. An additional goal is to obtain more basic knowledge regarding crystal growth and junction formation, while at the same time improving the product. For some time empirical methods have been employed in the crystal growth and junction formation phases of this program. This empirical treatment was felt necessary, as many experimental investigations yielded contradictory results when performed on different occasions. However, in this past period, calculations have been made on a simple model of crystal growth, and quantitative values have been used to check experimental data. Good correlation has been obtained between the model and the observed results, and even better correlation is expected when new data is available. From these results several new ideas have arisen for the preparation of SiC crystals of a given size and for increasing the yield of usable crystals. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1963
- Accession Number
- AD0416268
Entities
Organizations
- Westinghouse Electric Corporation