SEMICONDUCTOR DEVICE CONCEPTS.

Abstract

Some further experience and problems with con tamination encountered in halogen vapor synthesis of Ga(As(1-x) P(x)) crystals are described. The possibility of oxygen contamination of Ga(As(1-x) P(x)) during vapor synthesis is discussed. Some experiments which bear upon the direct-indirect transition and lower wavelength possibilities of Ga(As(1-x) P(x)) are described. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 28, 1963
Accession Number
AD0416396

Entities

Organizations

  • General Electric

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Contamination
  • Electronics
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Transitions

Readers

  • Electrochemical Surface Science
  • Semiconductor Device Technology
  • Snow Cover Descriptors for Reptiles and Their Illustrations.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene