RESEARCH STUDY FOR INCREASING THE SENSITIVITY OF PHOTOEMITTERS

Abstract

Progress is reported in the development of ap paratus for simultaneous and quasi-simultaneous deposition of the constituents of S-20 photo cathodes by the mouccular beam technique. Several modifications of standard S-20 cathodes were attempted. A conducting substrate for the Cs-K-Sb photocathode has been developed. X-ray diffraction and chemical analysis experiments were conducted to establish the chemical com position of Cs-K-Sb cathodes. Development of the techniques for high energyellectron diffraction of photocathodes and low energy electron diffrac tion of single crystals has been continued. Small area shallow p-n junctions have been pre pared in germanium by diffusion and epitaxial growth for field induced phomeemission with low reverse bias currents. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 16, 1963
Accession Number
AD0416686

Entities

People

  • A. H. Sommer
  • C. R. Fuselier
  • E. K. Gatchell
  • R. E. Simon
  • W. H. Mccarroll

Organizations

  • Sarnoff Corporation

Tags

DTIC Thesaurus Topics

  • Cathodes
  • Chemical Analysis
  • Crystals
  • Diffraction
  • Diffusion
  • Electrons
  • Epitaxial Growth
  • Germanium
  • P-N Junctions
  • Photocathodes
  • Sensitivity
  • Single Crystals
  • Standards
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Aerosol Science/Aerosol Physics
  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene