RESEARCH AND DEVELOPMENT OF SOLID STATE TUNNEL DEVICES AND ARRAYS CAPABLE OF OPERATION AT MICROWATT POWER LEVELS.
Abstract
The development is described of a microwatt back ward diode on Si with a reverse current of the order of 10nA, a junction capacitance of about 1pF, and a rectification ratio of 100 at 0.15 volts; a microwatt tunnel diode on GaAs with a peak current less than 10 micro A, a peak-to valley ratio of 6 to 10, and a theoretical switching time of 0.1 micro sec at a junction ca pacitance of 0.5 pF; some interesting properties of Al-SiO2-Si thin film tunnel devices. These latter devices are useful for application as either rectifiers or as varactors with a high figure of merit. Electron beam technology using a programmed electron beam system employing a flying spot scanner has also been investigated for possible application for the fabrication of such devices. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 19, 1963
- Accession Number
- AD0417247