RESEARCH ON HIGH TEMPERATURE STRAIN GAGE ELEMENTS.

Abstract

This project was concerned with an attempt to find materials for use as strain gages at tem peratures above 2000 F (1093 C). Five materials were investigated: silicon carbide, silicon, pyrolytic graphite, rutile, and gallium phos phide. The gage factors of these materials were measured in the temperature range of 25 C (77 F) to 750 C (1382 F). The gage factor of silicon carbide was found to be very small even at room temperature, and none of the other mate rials appeared to offer any possibility of re taining a useful gage factor at 2000 F. How ever, several results which may well be of prac tical value were obtained: the usefulness of silicon as a strain gage was extended to about 650 C (1202 F) by a new contacting process, silicon carbide was found to be a good tempera ture sensor over a wide range of temperature, and rutile was found to be a good oxygen sensor over a fairly wide range of elevated temperature. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1963
Accession Number
AD0417541

Entities

People

  • C.b. Jordan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Detectors
  • Elements
  • Gages
  • Graphitic Materials
  • High Temperature
  • Materials
  • Oxygen Sensors
  • Silicon
  • Silicon Carbide
  • Strain Gages

Fields of Study

  • Materials science

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Snow Cover Descriptors for Reptiles and Their Illustrations.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene