MECHANISMS OF FAILURE IN SEMICONDUCTOR DEVICES
Abstract
Extensive studies of low-frequency noise in resistors and semiconductor devices have been made for the express purpose of exploring any correlation between low-frequency excess noise and device deterioration or other anomalous behavior. New techniques for making noise measurements have made it possible to distinguish between two types of noise, one which is more or less regular which has been called clean noise and the other called burst noise which is irregular and statistically nonstationary. Present results indicate that burst noise is associated with chemical processes and is related to drift of electrical parameters. It is tentatively concluded that burst noise is also related to irreversible processes which are precursors of device failure, although further studies are required to definitely establish this connection. Further studies have been made of gallium arsenide tunnel diode failure. Infrared radiation from diodes biased in the injection region has been measured and related to true injection current. The voltage-current characteristic of a number of diodes as a function of time have been recorded. From these measurements a quantitative relationship among radiation, injection current and degradation rate has been established.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1963
- Accession Number
- AD0418145
Entities
People
- Rajendra P. Nanavati
- Richard L. Anderson
- W. Howard Card
Organizations
- Syracuse University