THIN FILM ACTIVE DEVICES.
Abstract
The experiment aimed at determining both the mean free path of a directed beam of hot elec trons and the efficiency of collection of such a beam has been set up, and the electron gun and target assemblies are being calibrated. Pre liminary runs should begin during the next quarter. Studies were continued of the metal thin insulator-semiconductor diode system as a possible high efficiency collector of hot elec trons. Visible light emission was observed from such diodes at 77 K under forward bias, and is being attributed to electron-hole recombination in the CdS. The hole is felt to be generated by electron tunneling from the valence band of the semi-conductor to the metal. Fabrication of MEA structures on single-crystal germanium collectors was continued. A quartz crystal oscillator is being installed to monitor the thickness and deposition rate of the reactively evaporated Al2O3 layer. Temperature dependence of g sub m for MEA devices was obtained and it was found that these devices are exceptionally stable over a wide temperature range. Preliminary frequency response data taken point up the need for much reduced line widths to cut down parasitic capacitance effects. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 22, 1963
- Accession Number
- AD0418255
Entities
People
- James P. Spratt