THE EFFECT OF NUCLEAR RADIATION AT CRYOGENIC TEMPERATURE ON SEMICONDUCTOR MATERIALS,
Abstract
The radiation-effects literature received by the REIC prior to 1963 concerning the combined effects of nuclear radiation and cryogenic tem peratures on semiconductor materials has been reviewedhe materials covered include germa nium, silicon, tellurium, indium antimonide, in dium arsenide, and bismuth telluride. Changes in electrical properties and results of annealing studies are summarized. The bombarding particles considered include electrons, neutrons, alpha particles, deuterons, and gamma rays. The tem peratures covered range from 4.2 to 273 K. The need for more low-temperature irradiation studies is demonstrated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1963
- Accession Number
- AD0418420
Entities
People
- Philip J. Mcnally
Organizations
- Battelle Memorial Institute