AN INVESTIGATION OF BASIC MECHANISMS OF TRANSIENT HIGH ENERGY RADIATION EFFECTS IN INSULATORS AND SEMICONDUCTORS.
Abstract
This work is an investigation of the basic mechanisms of transient radiation effects on insulators and semiconductors. Various alkali halide crystals were exposed to a transient high energy environment and an experimental determina tion of the time-dependent F-center information was made by optical methods. A germanium semi conductor crystal was also exposed to transient high energy radiation and the decay of excess carrier density as a function of generation rate was studied. The experimental investigations are supplemented in both areas by theoretical calculations. They include a solution of the rate equations governing F-center formation and a graphical solution for the non-linear differ ential equations governing the density of excess carriers in semiconductors. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 13, 1962
- Accession Number
- AD0418534
Entities
People
- R.r. Emmert
- V.r. Honnold
- W.m. Peffley