CYCLOTRON RESONANCE EXPERIMENTS.

Abstract

Microwave cyclotron resonance and other experi ments have been conducted for purposes of study ing band structure and transport properties of several semiconductors and semimetals including Ge, Si, Te, alpha-Sn, Sb and CdS. In addition to microwave experiments at 3 cm, 1.2 cm and .4 cm wavelengths, experiments on galvanomagnetic coefficient measurements and deHaas-van Alphen measurements were carried out. Some experiments involved the application of large uniaxial stresses to Ge and Si and other techniques have centered on the use of rapid modulation of the intensity of light used to excite free carriers in semiconductors. Each of these areas of research is described briefly in terms of what was attempted and what can be stated about definite results. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1963
Accession Number
AD0418765

Entities

People

  • J.h. Mendum
  • M.h. Halloran
  • R.n. Dexter
  • W.s. Baer

Organizations

  • University of Wisconsin–Madison

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Coefficients
  • Compound Semiconductors
  • Cyclotron Resonance
  • Cyclotrons
  • Electronics
  • Energy Bands
  • Intensity
  • Measurement
  • Microwaves
  • Modulation
  • Physical Properties
  • Resonance
  • Semiconductors
  • Solid State Electronics
  • Transport Properties

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene