RESEARCH AND DEVELOPMENT EPITAXIAL OVERGROWTH STRUCTURES IN SILICON

Abstract

Details are provided on the work performed in meeting the third quarter goal of preparation and delivery of: (1) Structures prepared by oxide masking of selected areas during deposition of epitaxial silicon, (2) Structures prepared by oxide masking of selected areas during HCl etching, (3) Structures made by preferential growth of epitaxial silicon through holes in an oxide mask to form a transistor base followed by reoxidation and a second preferential growth to form emitters. A brief review of oxidation and growth techniques is presented. Evaluation results are given for some specific structures produced.

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Document Details

Document Type
Technical Report
Publication Date
Jan 14, 1963
Accession Number
AD0419328

Entities

People

  • G. Schnable

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Chemistry
  • Electronic Components
  • Electronics
  • Electronics Laboratories
  • Engineers
  • Epitaxial Growth
  • Films
  • Intervals
  • Materials
  • New Jersey
  • New York
  • Oxide Films
  • Semiconductor Devices
  • Semiconductors
  • Transistors
  • United States

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology