CAPACITIVE PROPERTIES OF THIN FILM DEVICES,
Abstract
Efforts were directed towards experimentation on the current transfer characteristics of very thin insulating layers. In this investigation a special bridge circuit is used to measure the capacitive properties of evaporated and sputtered thin film diodes. The low voltage limitations and nonlinear properties of the devices were considered in the instrumentation design. The measurements indicated a strong dependence of capacitance on frequency between 1 cps and 100 KCS. An increase in capacitance with DC bias was noted, but only small random variations with changes of signal amplitude. The devices were unstable and changed with both time and DC current. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1963
- Accession Number
- AD0419995
Entities
People
- Richard Mark
Organizations
- Air Force Institute of Technology