INVESTIGATIONS OF FUNDAMENTAL LIMITATIONS DETERMINING THE ULTIMATE SIZE OF MICROSTRUCTURES. THE TOPOGRAPHY AND GROWTH MECHANISM OF SILICON OVERGROWTHS,

Abstract

Silicon films have been grown by chemical reaction on (111) silicon substrates. The surfaces were examined by various microscopic and interferometric methods. Surface structures are classified into two groups depending on whether the angles between the bounding planes and the (111) surface are small (less than 3 degrees) or large (greater than 10 degrees). A layer growth mechanism is postulated to explain the topography and the influence of growth parameters. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1963
Accession Number
AD0420058

Entities

People

  • A. G. Revesz
  • R. J. Evans

Organizations

  • RCA Corporation

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Chemical Reactions
  • Earth Sciences
  • Geography
  • Microstructure
  • Substrates
  • Topography

Readers

  • Materials Science (Mechanical Engineering).
  • Radar Systems Engineering.
  • Semiconductor Device Technology