MATERIAL PROCESSING AND PHENOMENA INVESTIGATION OF FUNCTIONAL ELECTRONIC BLOCKS.
Abstract
Contents: High Resistivity GaAs Substrates-epitaxial GaAs from GaAs feed material, epitaxial GaAs from elemental gallium and arsenic, deposition of doped epitaxial GaAs, Anomalous layer in GaAs epitaxial deposition, epitaxial silicon deposition on GaAs, masking and diffusion for multiple device formation; Three Dimensional Arrays--epitaxial deposition of high resistivity GaAs, Interconnections; Photoeffects--materials and general technology, contacts, functional electronic block studies, GaAsP and GaP Epitaxial Devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 1963
- Accession Number
- AD0420097
Entities
Organizations
- Texas Instruments