STUDY ON A DEFINITIVE CONFIRMATION OF THERMAL INSTABILITY IN SILICON POWER TRANSISTORS.
Abstract
Supplemental theoretical and experimental studies are presented which concern the problem of lateral thermal instability in silicon power transistors. Resistances introduced into the transistor structure are shown to stabilize by suppressing the formation of hot spots. The stability index can be obtained by impedance measurements. Deliberately introduced inhomogeneities cause preferential formation of the thermal instability. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1963
- Accession Number
- AD0420369
Entities
People
- Hans J. Queisser
- W. W. Hooper