LOW TEMPERATURE VAPOR GROWTH STUDIES,
Abstract
Studies have been initiated to explore the potential of utilizing chemical and physical perturbing influences to extend the temperature ranges of well known and novel vapor transport reactions, and to determine which parameters most affect deposition characteristics in epitaxial growth of semiconductors from the vapor. Germanium has been employed almost exclusively as a prototype material in the initial work. A series of extensive thermodynamic analyses of systems containing Ge and/or Ga with H and/or He and iodine have been completed. Based on these analyses, studies of transpiration conditions for iodine and germanium source beds in an inert carrier stream have been begun, and a disproportionation flow system using HI and hydrogen/ helium carrier gas mixtures has been designed, constructed and tested. The effects of physical perturbations such as U.V. light have been studied via spectroscopic techniques. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1963
- Accession Number
- AD0420462
Entities
People
- A. Reisman
Organizations
- IBM Thomas J. Watson Research Center