GALLIUM ARSENIDE EPITAXIAL FILM GROWTH.
Abstract
Excellent control over the doping level in n-type layers was achieved by using a doping gas mixture containing 0.0016% hydrogen sulfide in hydrogen. Carrier concentrations were proportional to flow rates of hydrogen sulfide within = 2%. Mobility measurements on the sulfur-doped layers disclosed a previously unreported dependence on the input sulfur concentration. Heat treatment at 1000C raised the carrier concentration of a layer above the maximum of 4 x 10 to the 18th/cc and indicates that 10 to the 19th electrons/cc is attainable by this method. Comparison of the frequency of bumpiness and poor growth with the two vapor sources showed that in the last six months poor structure occured approximately 2 1/2 times less with HCl than with GaCl3. Concentrated effort is being made on: (1) obtaining ultra-pure HCl; and (2) gaining more complete understanding and control of the factors responsible for the quality of layer structure. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1963
- Accession Number
- AD0420949
Entities
People
- W. Oshinsky