THE PULSE-POSITION MODULATION OF A LIGHT EMITTING GALLIUM ARSENIDE DIODE,
Abstract
The gallium arsenide diode is one of the most efficient semiconductor light emitters in use today. Like all semiconductor devices, however, it can dissipate only small amounts of power. This severly limits the range over which the radiation from a GaAs diode can be detected. By using pulse-position modulation, high current pulses of short duration can be used to modulate the light and maintain low power dissipation. This significantly increases the range obtainable. The complete transmitter for this scheme contains only five or six transistors, depending on the maximum current limit of the diode used. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1963
- Accession Number
- AD0421431
Entities
People
- George D. Locke Jr.
Organizations
- Air Force Institute of Technology