MICROWAVE STUDIES OF SEMICONDUCTING DIAMONDS.

Abstract

Microwave techniques have been applied to an investigation of the electrical conduction properties of semiconducting diamonds. Techniques of dealing with specimens as small as 1 mgm in size have been emphasized. Measurements of microwave loss have been made as a function of temperature in the range -50 C to +50 C and analyzed by means of cavity perturbation theory. The activation energies and resistivities deduced from these data have been in agreement with the results of dc measurements where the comparison could be made. An initially nonsemiconducting diamond treated with boron under conditions of high temperature and pressure was found to exhibit microwave loss. The temperature dependence was abnormal, and it has not been definitely established that the loss mechanism involves diffused-in boron. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 15, 1963
Accession Number
AD0421611

Entities

People

  • M. H. Sirvetz

Organizations

  • Air Force Cambridge Research Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Energy
  • Heat Of Activation
  • High Temperature
  • Measurement
  • Microwaves
  • Perturbation Theory
  • Perturbations
  • Pressure Measurement

Readers

  • Microwave Engineering.
  • Theoretical Analysis.
  • Thin Film Deposition Science.