ADVANCED FUNCTIONAL ELECTRONIC BLOCK DEVELOPMENT

Abstract

Efforts continued on investigations of new semiconductor phenomena for application in Advanced Functional Electronic Blocks. The work is divided into four specific tasks; the first two relate to optical phenomena, the third to piezoelectricity, and the fourth to thermal effects. The radiative recombination mechanisms in GaAs P-N junctions and the overall efficiency of these devices as light emitters were investigated. This report describes the optical and electrical characteristics of both spontaneous emission sources and lasers. A discussion of the possible radiative recombination mechanisms is also included. A multiplex network or lowlevel photochopper has been selected as the first application of the GaAs infrared source to FEB's. This report describes geometrical and optical techniques which may be employed to optimize the optical coupling between the GaAs light source and silicon photodetector.

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Document Details

Document Type
Technical Report
Publication Date
May 15, 1963
Accession Number
AD0421739

Entities

People

  • J. R. Biard

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Detectors
  • Electronics Laboratories
  • Energy Bands
  • Frequency
  • Integrated Circuits
  • Light Sources
  • Measurement
  • Modules (Electronics)
  • Optical Materials
  • Optical Phenomena
  • P-N Junctions
  • Quantum Efficiency
  • Refractive Index
  • Semiconductors
  • Test And Evaluation
  • Test Facilities

Fields of Study

  • Materials science

Readers

  • Business Analytics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics