ADVANCED FUNCTIONAL ELECTRONIC BLOCK DEVELOPMENT.
Abstract
Continued investigations of new semiconductor phenomena for Advanced Functional Electronic Blocks are described in this report. GaAs Emission Technology - Direct measurements of the electrical and spectral characteristics for both GaAs and GaAs1-xPx sources are presented and discussed. Absorption measurements obtained with GaAs bulk and diffused materials provide a value for the internal quantum efficienc in ouous souces of at least 15 percent at room temperature ght ultiplexing - Four-terminal active devices, utilizing optical coupling between a GaAs infrared hemispherical dome source and a silicon -htotansistor detector, have been fabricated. One device, having unity current gain and response time of approximately 4 microsec at a curent level of 100 ma, shows promise for use as a digital computer element. Piezoelectric Effects in Semiconductors - An analysis is presented which describes the effect of material constants and applied drift field on the gain which can be realized with the ultrasonic amplification effect. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1963
- Accession Number
- AD0421740
Entities
People
- J. R. Biard
- W. T. Matzen
Organizations
- Texas Instruments