AN L-BAND TUNNEL DIODE OSCILLATOR.
Abstract
Recent developments in crystal growing techniques were employed to grow two highly doped GalliumArsenide crystals. Both crystals produced satisfactory tunnel diodes. Cunnel diodes were made having a ring junction geometry. Although the process worked well, the electrical parameters were not as good as hoped for. A new tunable oscillator circuit was made and tested. A power output of 26 to 30 mw was obtained over the required frequency fange. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 31, 1963
- Accession Number
- AD0421867
Entities
People
- D. E. Nelson
- E. T. Casterline
- R. Gold