NUCLEAR MAGNETIC RESONANCE STUDIES OF HIGHLY DEGENERATE P-TYPE SILICON,
Abstract
This thesis reports the experimental investigation of highly degenerate p-type silicon using the techniques of nuclear magnetic resonance, and the interpretation of the results in the light of nuclear relaxation theories and a reasonable physical model. Silicon samples were examined in the concentration range from 10 to the 18th power to 10 to the 20th power boron impurities/cc and in the temperature range from 1.4 to 300 K. The parameters measured are the spinlattice relaxation time, the spin-spin relaxation time, and the resonance line shift. In addition, electron spin resonance spectra were observed for the same samples to aid in the determination of impurity content other than boron. The wealth of experimental Hall coefficient and resistivity data, in particular the results of Carlson, on the same samples, has been freely used. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1963
- Accession Number
- AD0421878
Entities
People
- Ronald Kent Sundfors
Organizations
- Cornell University