HIGH POWER SEMICONDUCTOR PHASE SHIFTING DEVICES.
Abstract
An introduction is presented summarizing the role of the diode phase shifter both as a high power array antenna beam steering element and as a low power countermeasure phase jammer or instrument level phase trimming network for microwave impedance measurements or synchronization of parallel high power tubes. Canonical circuit configurations for the transmission-reflection mode used at low power for continuous phase shifting and high power for time delay as well as the transmission mode used to obtain small phase shifts at high power are discussed. An L-band experimental transmission circuit is described which has yielded 5 deg. of phase shift using two 800 Volt PIN diodes at 120 kilowatts; operating frequency was 1300 mc, pulse length was 1 microsec. and the duty cycle was 0.001. Measured results are compared with theoretical performance. An S-band transmission phase shifter circuit was also considered and experimental results included a phase shift range of over 0 deg. to 240 deg. in 8 equal steps at 3000 mc and 23.5 KW peak power. The pulse length was 1 microsec. and the duty cycle 0.001. These results are shown to agree very closely with theoretical calculations. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1963
- Accession Number
- AD0421891
Entities
People
- Joseph White
Organizations
- M/A-COM Technology Solutions