RESEARCH AND DEVELOPMENT ON HIGH CURRENT TUNNEL DIODES.
Abstract
Emphasis during this period was placed on fabricating the twenty germanium and gallium arsenide 300-ampere tunnel diodes required for delivery to the Navy. A new package was designed to simplify packaging and eliminate the problems previously encountered. This new package has proven very satisfactory. In an attempt to try and improve both efficiency and high temperature capability in gallium arsenide diodes, various alloying dots were investigated. These investigations revealed that the present 60/40 tin/ lead counterdopant provides the highest efficiencies thus far achieved. The investigations also indicate that satisfactory diodes may be fabricated using higher melting point counterdopants. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1963
- Accession Number
- AD0421897