THE RESEARCH AND DEVELOPMENT OF HIGH CURRENT AND HIGH VOLTAGE SILICON CONTROLLED RECTIFIERS.
Abstract
This report covers work performed on highcurrent and high-voltage silicon controlled rectifier Device C of this contract. Process optimization of voltage, current and speed, and the approach to various problems concerning fabrication of Device C are discussed. Test data obtained on representative samples fabricated during this period of develo7ment are included herein. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1963
- Accession Number
- AD0421898
Entities
Organizations
- General Electric