TRANSISTOR, VHF SILICON POWER (5W).
Abstract
An improved overlay structure was designed which retains most of the advantages of the original overlay structure and reduces fabrication problems by the introduction of a highly doped p layer surrounding each emitter site. This conductive matrix replaces metal conductors in the vicinity of the emitters and eliminates the deposition or anodic formation of insulating layers. Devices fabricated on 6-9 ohm-cm starting material utilizing this new structure resulted in 400 megacycle power gains as high as 6.99 db at 5.0 watts output power. Circuit efficiency under these conditions was 50 percent. Improved performance was obtained on devices fabricated on 3-4 ohm-cm material, having narrower base width and employing the highly conductive p matrix. At 400 megacycles these units had power gains as high as 7.78 db at 6.0 watts output power and 48 percent circuit efficiency. These same units measured in a common emitter stub tuned amplifier at 500 megacycles had power gains as high as 6.24 db at 4.2 watts output power and 41 percent circuit efficiency. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1963
- Accession Number
- AD0422013
Entities
People
- L. R. Possemato
- P. L. Mcgeough