RESEARCH AND DEVELOPMENT EPITAXIAL OVERGROWTH STRUCTURES IN SILICON.

Abstract

Effort was directed toward the preparation and delivery of multilayer epitaxial overgrowth structures in silicon, including 2-layer, 3-layer, 4-layer and more complex structures. The material was designed for use in fabrication of allepitaxial transistors, double-diffused pnip transistors, voltage-variable capacitance diodes and other components. Wafers supplied included structures having epitaxial layers with graded impurity concentration, and wafers prepared by oxide masking of selected areas during HCl etching or during deposition of epitaxial silicon. Structures were also prepared by preferential growth of epitaxial silicon through holes in an oxide mask, followed by reoxidation and a second preferential growth. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 15, 1963
Accession Number
AD0422199

Entities

People

  • G. Schnable

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Capacitance
  • Diodes
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Fabrication
  • Impurities
  • Materials
  • Semiconductor Devices
  • Solid State Electronics
  • Transistors
  • Varactor Diodes

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology