STATIC AND DYNAMIC PERFORMANCE OF MICROPOWER TRANSISTOR LINEAR AMPLIFIERS
Abstract
Silicon planar transistors which exhibit junction reverse currents small than 10 to the minus 9 amperes and common emitter current transfer ratios greater than 50 for collector currents of 10 to the minus 6 amperes are now available. An optimum design technique for the application of these devices in linear broadband amplifiers was devised. With slight modification, the optimum design technique also serves as the basis for a worst case design procedure for linear amplifiers considering transistor and resistor tolerance margins. The frequency response of micropower amplifiers can be accurately predicted on the basis of a unilateralized hybrid pi transistor equivalent circuit. Amplifier bandwidth may be significantly enhanced by means of a cascode circuit. Using a simple thermistor temperature compensation technique, micropower amplifiers were designed whose gain and terminal impedances are virtually insensitive to large temperature changes. A common emitter broadband micropower amplifier operating from a three-volt supply with load and source impedance of 50K ohms can provide a 0.18-v peak AC load voltage over the temperature range -50 to 100 deg C for a power drain of 23uw and power gain of 25 db.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1963
- Accession Number
- AD0422378
Entities
People
- J. D. Meindl
- O. Pitzalis
- R. A. Gilson
- W. Kiss
Organizations
- United States Army Communications-Electronics Command