ENGINEERING SERVICES ON TRANSISTORS.
Abstract
Research concerns studies and investigations related to transistors and transistor-like devices, with a view toward demonstrating and increasing the practicability of their use in operating equipment. Work is discussed on a 6-Gc germanium transistor and integrated circuit devices. A comparison is made of electrical breakdown characteristics of germanium diodes made by planar techniques and by mesa etching. It is shown that for the planar type the reverse current voltage characteristic will be softer than that of a mesa diode from the same material and the breakdown voltage will be lower. Breakdown voltage is calculated for epitaxial germanium and silicon structures. It is shown that when the conductivity of the substrate and the diffused layer are both much greater than that of the epitaxial layer, then for thin layers the breakdown voltage depends only on the thickness between the diffused junction and the substrate. Fabrication techniques and problems related to the 6-Gc transistor are discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1963
- Accession Number
- AD0422492
Entities
People
- G. Gibbons
- J. Kocsis
- K. E. Martersteck
- R. E. Davis
- S. R. Arnold