HIGH SPEED POWER AMPLIFIER USING ELECTRON BEAM SWITCHED P-N JUNCTIONS.

Abstract

A design theory was developed for the diode. It indicates the possibility of fabricating devices having a gain close to the maximum of 4700. The predicted steady-state I-V characteristics of the device permit calculation of some physical quantities which cannot be measured otherwise. Approximate calculations indicate that all transient processes are associated with times in the order of 10 to the -10 power seconds. High transconductance, low cut off, high beam current electron guns were designed for this project. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 31, 1963
Accession Number
AD0422530

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Amplifiers
  • Electron Beams
  • Electron Guns
  • Electronic Equipment
  • Electrons
  • P-N Junctions
  • Power Amplifiers
  • Steady State
  • Transconductance

Fields of Study

  • Physics

Readers

  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics